| 摘要 |
A solid-state image sensor has a chip-size package, which can be easily fabricated. The element-formation regions are formed in the semiconductor substrate (21) of the light-receiving element layer (20) corresponding to the pixel regions. The semiconductor light-receiving elements (PD) are formed in the respective element-formation regions and covered with the light-transmissive insulator films (25a), (25b) and (26). The light-introducing layer (40), which includes the light-introducing cavity (42) and the quartz cap (51) for closing the cavity, is formed on the film (26). The microlenses (43) are incorporated into the cavity (42). The electric output signals of the semiconductor light-receiving elements (PD) are taken out to the bottom of the substrate (21) by way of the buried interconnections of the substrate (21) and then, derived to the outside of the image sensor by way of the output layer (10) or the interposer (10A). <IMAGE> |
