| 摘要 |
An ion implantation method for a threshold voltage adjustment of a MOSFET(Metal Oxide Semiconductor Filed Effect Transistor) gate through a transition metal doping is provided to control a pinch-off being saturated according to a drain voltage and to generate a channel by using polarization. A p-well(210), an n-well(220), and an isolation layer(250) are formed on a semiconductor substrate and then an ion implantation process for adjusting a gate threshold voltage is performed. The ion implantation process is simultaneously performed on the p-well and the n-well by using a transition metal. The transition metal is one selected from Mn, Ni, and Co. The ion implantation process is performed at 1.3~7.0E15 atm/cm^2 and 10 KeV~50 Kev. Therefore, a pinch-off being saturated according to a drain voltage is controlled and a channel is generated by using polarization.
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