Phase change memory cell having a step-like programming characteristic

摘要

A memory cell (200a) includes a first electrode (202), a second electrode (204), and phase change material (208) contacting the first electrode and the second electrode. The phase change material has a step-like programming characteristic realised by multiple rectangular phase change portions (210a-210e). The first electrode, the second electrode, and the phase change material form a planar or bridge phase change memory cell.