发明名称 Manufacturing method for non-active electrically structures in order to optimize the definition of active electrically structures in an electronic circuit integrated on a semiconductor substrate and corresponding circuit
摘要 A method for manufacturing electrically non-active structures for an electronic circuit integrated on a semiconductor substrate is provided, with the electronic circuit including first and second electrically active structures. The method includes inserting the electrically non-active structures in the electronic circuit to make uniform a surface above the semiconductor substrate. The inserting includes identifying, among the electrically non-active structures, a first group of electrically non-active structures to be adjacent the first and second electrically active structures, and identifying, among the electrically non-active structures, a second group of electrically non-active structures not adjacent to the first and second electrically active structures. The method further includes defining, on the semiconductor substrate, the first and second groups of electrically non-active structures through different photolithographic steps.
申请公布号 US7320904(B2) 申请公布日期 2008.01.22
申请号 US20060334988 申请日期 2006.01.19
申请人 STMICROELECTRONICS S.R.L. 发明人 CAPPELLETTI PAOLO GIUSEPPE;MAURELLI ALFONSO;ZABBERONI PAOLA
分类号 H01L21/82;H01L21/8247;H01L27/02;H01L27/105;H01L27/115;H01L29/00;H01L29/76 主分类号 H01L21/82
代理机构 代理人
主权项
地址