| 摘要 |
A semiconductor device is provided with a plurality of actually operating capacitors (36a), which are arranged in an actually operating capacitor section (26) on a semiconductor substrate (10) and are provided with a lower electrode (30), a ferroelectric film (32) and upper electrodes (34); a plurality of dummy capacitors (36b), which are arranged in a dummy capacitor section (28) arranged outside the actually operating capacitor section (26) on the semiconductor substrate (10) and are provided with the lower electrode (30), the ferroelectric film (32) and the upper electrodes (34); a plurality of wirings (40), which are formed on the actually operating capacitors (36a) and connected to the upper electrodes (34) formed on the actually operating capacitors (36b), respectively; and wirings (40) formed on the dummy capacitors (36b), respectively. The ratio of the pitch of the dummy capacitors (36b) to the pitch of the actually operating capacitors (36a) is within a range of 0.9-1.1, and the ratio of the pitch of the wirings (40) formed on the dummy capacitors (36b) to the pitch of the wirings (40) formed on the actually operating capacitors (36a) is within a range of 0.9-1.1. |
