发明名称 High-purity aluminum sputter targets and method of manufacture
摘要 The high-purity aluminum sputter target is at least 99.999 weight percent aluminum and has a grain structure. The grain structure is at least 99 percent recrystallized and has a grain size of less than 200 mum. The method forms high-purity aluminum sputter targets by first cooling a high-purity target blank to a temperature of less than -50 ° C. and then deforming the cooled high-purity target blank introduces intense strain into the high-purity target. After deforming, recrystallizing the grains at a temperature below 200 ° C. forms a target blank having at least 99 percent recrystallized grains. Finally, finishing at a low temperature sufficient to maintain the fine grain size of the high-purity target blank forms a finished sputter target.
申请公布号 US7320736(B2) 申请公布日期 2008.01.22
申请号 US20040967133 申请日期 2004.10.19
申请人 PRAXAIR TECHNOLOGY, INC. 发明人 PERRY ANDREW C.;GILMAN PAUL S.;HUNT THOMAS J.
分类号 C22F1/04;C22F1/00;C23C14/34 主分类号 C22F1/04
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