| 摘要 |
<p>A method for forming a metal pattern is provided to form a cross-sectional structure of a photoresist pattern which is not sensitive to exposure dose, by determining a degree of an undercut using an angle of incident light at exposure. A first photoresist(110) and a second photoresist are formed on a semiconductor substrate(100), and then an exposure process is performed, in which light is incident on the second photoresist at a desired angle, to form a photosensitive region of an undercut structure. The substrate having the first and second photoresist is dipped in MCB(Mono Chloro Benzene) to cure the second photoresist. An etching and ashing processes are performed on the first and second photoresist to form a photoresist pattern of an undercut structure. A metal pattern(140) is formed by using the photoresist pattern, and then a lift-off process is performed on the second cured photoresist(121). An ashing process is performed on the first photoresist pattern.</p> |
