METHOD FOR HEAT- AND IMPACT-RESISTANT CONNECTION OF A SEMICONDUCTOR BY MEANS OF PRESSURE SINTERING

摘要

Method for producing a pressure sintering connection for a semiconductor chip (22) on a connecting partner from the following group: substrate, further semiconductor or circuit carrier, and for pressure sintering prepared semiconductor chips (22), where: before a semiconductor wafter (14) is split into individual semiconductor chips (22), a metal powder suspension (10) is applied in highly viscous form to at least the areas of the individual semiconductor chips (22) which are later to be connected by sintering; the suspension layer is dried by out-gassing the volatile constituents and by producing a porous layer; the porous layer is pre-compressed by applying pressure and heat so that it is resistant to the sawing of a wafer silicon saw; the semiconductor chips (22) are separated using sintering material layers of suitable size which are on them; the semiconductor chips are oriented on the connection substrate; and the final sintering is produced to form a permanent connection by diffusing/introducing sintering material atoms into the respective connecting partners.