FIELD-EFFECT TRANSISTOR, INTEGRATED CIRCUIT ELEMENT, AND MANUFACTURING METHOD FOR THE BOTH

摘要

PROBLEM TO BE SOLVED: To provide a novel field-effect transistor, regarding a field-effect transistor of a multigate structure having a channel region containing Ge atoms. SOLUTION: The novel field-effect transistor includes a semiconductor substrate containing Si atoms; a projection structure which is formed on the semiconductor board and contains Si atoms and Ge atoms; a channel region which is formed in the projection structure and contains Ge atoms; a channel underpart region which is formed on the underpart of the channel region in the projection structure, and in which a Ge composition ratio related to Si atoms and Ge atoms contained in the projection structure changes continuously from the channel region side to the semiconductor board side; a gate insulating film formed on the channel region; and a gate electrode formed on the channel region via the gate insulating film. COPYRIGHT: (C)2008,JPO&INPIT