| 摘要 |
PROBLEM TO BE SOLVED: To permit to make the switching speed of a thyristor for SRAM (static random access memory) cell from ON into OFF high, by employing a bulk semiconductor substrate to distinguish between a select cell and a non-select cell, while putting only the select cell OFF. SOLUTION: The semiconductor device 1 is provided on the bulk semiconductor substrate 10 with a plurality of memory elements 2 constituted of a thyristor 3 with a gate electrode 13 formed thereon, and an electric field effect transistor 4 connected to the thyristor 3. A bit line BL is connected to the cathode side of the electric field effect transistor 4 and, upon OFF operation of the selected memory element 2(2a), and a first voltage is impressed on the first region p1 side of the thyristor 3 of the selected memory element 2a. Further, a second voltage, higher than the first voltage is impressed on the cathode side of the electric field effect transistor 4 of the memory element 2a, and a voltage lower than the first voltage is impressed on a word line WL formed on the electric field effect transistor 4 of a non-select memory element 2b connected to another bit line BL same as the memory element 2a. COPYRIGHT: (C)2008,JPO&INPIT
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