SEMICONDUCTOR ELEMENT, OPTICAL SWITCHING ELEMENT AND QUANTUM CASCADE LASER ELEMENT

摘要

Provided are novel semiconductor element, optical switching element and quantum cascade laser. The semiconductor element includes a well layer having a GaN well layer and an InN well layer, and a superlattice layer having a pair of AlGaN barrier layers sandwiching the well layer. In the semiconductor element, increase of an electron-hole recombination probability (transition probability) between a conduction band and a valence band by wave function control, and an emission wavelength control are performed. The semiconductor element has, as an active layer, a stacked structure composed of the well layer, which has the GaN well layer and the InN well layer, and the pair of AlGaN barrier layers sandwiching the well layer.