| 摘要 |
PROBLEM TO BE SOLVED: To prevent the remaining of gas produced by the vaporization of liquid source. SOLUTION: The oxidation and diffusion device in a substrate treating device is provided with a first treatment gas supplying line 51 connected to a treatment chamber 25 for treating a wafer 1, a second treatment gas supplying line 53 connected to the first treatment gas supplying line 51 to supply second treatment gas containing the vaporized gas of the liquid source, and a vent line 55 connected to the second treatment gas supplying line 53. Further, the treating device is provided with a bypass line 56 which bypasses a connecting unit of a first treatment gas supplying line 51 to a second treating gas supplying line 53. Three-way valves 60, 70 are provided at the connecting units of the bypass line 56 to the first treatment gas supplying line 51; and two-way valves 81, 82 are provided at the downstream side of a connecting unit of the second treatment gas supplying line 53 to the vent line 55, and in the vent line 55. A valve switching control unit 45 is provided for controlling the three-way valves 60, 70 and the two-way valves 81, 82. COPYRIGHT: (C)2008,JPO&INPIT
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