发明名称 |
Method for detecting defects which originate from chemical solution and method of manufacturing semiconductor device |
摘要 |
A method for detecting defects which originate from a chemical solution includes coating a chemical solution on a surface of a mask, and radiating an exposure beam to the mask on which the chemical solution is coated, thereby performing enlarged projection exposure on a resist film which is formed on a surface of a substrate for an inspection. Further, the method for detecting defects which originate from a chemical solution includes performing an inspection of defects on the resist film which has been subjected to the enlarged projection exposure, and determining whether a result of the inspection meets a predetermined standard.
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申请公布号 |
US2008014535(A1) |
申请公布日期 |
2008.01.17 |
申请号 |
US20070797529 |
申请日期 |
2007.05.04 |
申请人 |
AOYAMA HISAKO;KOBAYASHI YUJI |
发明人 |
AOYAMA HISAKO;KOBAYASHI YUJI |
分类号 |
G03C5/00;G01N21/956;G01N23/225;G03F1/84;H01L21/027 |
主分类号 |
G03C5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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