| 摘要 |
PROBLEM TO BE SOLVED: To provide a fin FET structure and its manufacturing method. SOLUTION: The manufacturing method includes the steps for forming a silicon fin on the top surface of a bulk silicon substrate, forming gate dielectrics on the sidewalls at both sides of the fin, forming a gate electrode which comes into contact directly and physically with the gate dielectric layer on the sidewalls at both sides of the fin, forming a primary source/drain at a primary side fin in the channel region and forming a secondary source/drain at a secondary side fin in the channel region, removing a part of the bulk silicon substrate from the underside of at least one part of the primary and secondary source/drain regions for creating the void, and filling the void with the dielectric materials. The structure includes a body contact between a silicon body of the fin FET and the bulk silicon substrate. COPYRIGHT: (C)2008,JPO&INPIT
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