发明名称 |
POLYCIDE FUSE WITH REDUCED PROGRAMMING TIME |
摘要 |
<p>In one embodiment, a polycide fuse is provided that includes: a polysilicon layer; a silicide layer formed on the polysilicon layer; and a silicon nitride layer formed on the silicide layer by RTCVD, the silicon nitride layer having a relatively low hydrogen concentration and relatively low mechanical stress.</p> |
申请公布号 |
WO2007059480(A3) |
申请公布日期 |
2008.01.17 |
申请号 |
WO2006US60859 |
申请日期 |
2006.11.14 |
申请人 |
LATTICE SEMICONDUCTOR CORPORATION |
发明人 |
JIANG, CHUN;LOGIE, STEWART;MEHTA, SUNIL |
分类号 |
H01L21/82;H01L27/10 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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