| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor memory element such as a NAND flash memory element for removing any factor disturbing the high charge transmission of metallic wiring, and for preventing the damage of the surface of metallic wiring, and for achieving the high speed operation of a semiconductor memory element. SOLUTION: This method for manufacturing a semiconductor memory element comprises a step for forming contact plugs 40, 42 and 43 and a first inter-layer insulating film 39 and a second inter-layer insulating film 41 surrounding those contact plugs 40, 42 and 43 on a substrate 30; a step for forming a metallic wiring structure M overlapped on the contact plugs 40, 42 and 43 including a diffusion prevention film 46 configured of a patterned Ti/TiN film and metallic wiring 47 configured of a tungsten film; and a step for using cleaning chemical obtained by mixing H2SO4, H2O2, demineralized water and HF in order to oxidize the surface of the metallic wiring 47, and to form a protection film 49 on the surface of the metallic wiring 47. COPYRIGHT: (C)2008,JPO&INPIT
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