| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which process cost can be reduced without spoiling the characteristics of an element, and to provide its fabrication process. SOLUTION: The semiconductor device 100 comprises a semiconductor substrate 101, a channel layer 104 formed on the semiconductor substrate 101, an electron supply layer 106 formed on the channel layer 104, a first gate electrode 113a formed of a first material on the electron supply layer 106 and forming Schottky junction with the electron supply layer 106, an ohmic electrode 114a formed of a second material to sandwich the first gate electrode 113a and connected electrically with the channel layer 104, first insulating films 111 and 112 formed on the semiconductor substrate 101, a first layer 113b formed of the first material on the first insulating film 112, a first protection metal 114b formed of the second material on the first layer 113b, and a first interconnection 116b formed on the first protection metal. COPYRIGHT: (C)2008,JPO&INPIT
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