| 发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve manufacturing yield of a semiconductor device for which a WPP (wafer process package) technique is used. <P>SOLUTION: A conductive film 12 to be arranged between a re-wiring 9 and a bump electrode is formed by a non-electrolytic plating method in a condition where an Al wiring 2 of a plating power feeding region 52 is not exposed on the external peripheral portion of a semiconductor wafer. Exposure conditions where an opening 4 is formed on an insulating film 3 on the Al wiring 2 of a product acquiring region 51 are controlled by a photolithographic technique and an etching technique, so that the opening is not formed on the insulating film 3 on the Al wiring 2 of the plating power feeding region 52. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
| 申请公布号 |
JP2008010449(A) |
申请公布日期 |
2008.01.17 |
| 申请号 |
JP20060176227 |
申请日期 |
2006.06.27 |
| 申请人 |
RENESAS TECHNOLOGY CORP |
发明人 |
TORII KATSUHIRO;FUKUDA KAZUJI |
| 分类号 |
H01L21/60;H01L21/3205;H01L23/12;H01L23/52 |
主分类号 |
H01L21/60 |
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