| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method which is capable of shortening the time required for removing a reaction product and efficiently etching a silicon oxide, and to provide a recording medium. SOLUTION: A silicon oxide etching process comprises a modifying process of supplying gas and basic gas containing halogen elements to a silicon oxide to enable the gas and basic gas containing halogen elements to react on the silicon oxid, and modifying it into a reaction product and a removing process of removing the reaction product. The removing process comprises a first process S3b of promoting a temperature rise in the reaction product, and a second process S3d of promoting the evaporation of the reaction product. COPYRIGHT: (C)2008,JPO&INPIT
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