| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a film containing porous material with low dielectric constant. SOLUTION: This method for forming a porous material insulating layer comprises the steps of: forming a composite membrane which includes Si, C, O, H, and Si-CH<SB>3</SB>species, and includes at least one Si-containing structure formation material and at least one C-containing pore formation material at least on a portion of a substrate surface; and leaving at least 90% of the Si-CH<SB>3</SB>species (measured by FTIR) in a film formed as it is after the exposure step, when the composite membrane is exposed to active chemical species to at least partially reform the C-containing pore formation material. COPYRIGHT: (C)2008,JPO&INPIT
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