| 摘要 |
<p>The invention is directed to enhancement of performance of a back surface incident type semiconductor device having a light receiving element (11) and a manufacturing method thereof without increasing a manufacturing cost. A supporting body (15) is attached to a front surface of a semiconductor substrate formed with a light receiving element (11) and its pad electrode (13). Then, the supporting body (15) is etched to form a via hole (16) penetrating the supporting body and exposing the pad electrode (13). Then, a wiring (17) connected to the pad electrode (13) and extending onto a front surface of the supporting body (15) through the via hole (16) is formed. Lastly, the semiconductor substrate is separated into a plurality of semiconductor dies (10A) by dicing. The semiconductor device is mounted so that the supporting body faces a circuit board (30).</p> |
