PHOTORESIST COMPOSITION AND METHOD FOR FORMING A PATTERN USING THE SAME

摘要

A photoresist composition and a patterning method are provided to keep high-resolution characteristics of a photoresist pattern and to form a finer pattern exactly at the same time. A photoresist composition includes 87.5-97.5wt% of a mixed solvent, a photosensitive resin, and a photoacid generator. The mixed solvent is obtained by mixing a propylene glycol monomethyl ether solvent with an ester solvent having higher polarity than the propylene glycol monomethyl ether. A method for forming a photoresist pattern includes the steps of: (S102) coating a semiconductor substrate with the photoresist composition to form a photoresist layer; (S104) performing selective exposure of the photoresist layer using a light source; (S106) developing the exposed photoresist layer to form a photoresist pattern; and (S110) to reduce a width of the photoresist pattern, subjecting a photoresist pattern-formed object to a reflow process.