| 摘要 |
A process for producing a high-purity hafnium amide includes the steps of (a) adding a compound which contains a carbonyl group or sulfonyl group and is represented by the formula of A(O<SUB>y</SUB>XO<SUB>n</SUB>R<SUB>f</SUB>)<SUB>m </SUB>(e.g., CF<SUB>3</SUB>SO<SUB>3</SUB>H, Hf(CF<SUB>3</SUB>SO<SUB>3</SUB>)<SUB>4</SUB>, (CF<SUB>3</SUB>SO<SUB>2</SUB>)<SUB>2</SUB>O, CF<SUB>3</SUB>CO<SUB>2</SUB>H, CH<SUB>3</SUB>SO<SUB>3</SUB>H, C<SUB>6</SUB>H<SUB>5</SUB>SO<SUB>3</SUB>H, and (CH<SUB>3</SUB>SO<SUB>2</SUB>)<SUB>2</SUB>O), to a crude hafnium amide which is represented by the formula of Hf[N(R<SUB>1</SUB>)(R<SUB>2</SUB>)]<SUB>4</SUB>, where each of R<SUB>1 </SUB>and R<SUB>2 </SUB>independently represents a methyl group or ethyl group, and which contains a zirconium component as an impurity; and (b) subjecting a product of the step (a) to a distillation under reduced pressure, thereby removing the zirconium component from the crude hafnium amide.
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