| 摘要 |
A method of manufacturing a monolithic silicon acceleration sensor is disclosed. The monolithic silicon acceleration sensor includes one or more sensor cells, each sensor cell having an inertial mass positioned by beam members fixed to a silicon support structure. According to the method, a sandwiched etch-stop layer is formed. First sections of the inertia mass and beam members are also formed. In addition, a second section of the inertial mass is formed. Further, an inertial mass positioned by beam members fixed to a silicon support structure is formed. Also, a first cover plate structure is bonded to a first surface of the silicon support structure. |
