| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an electrode structure and an optical semiconductor element of which dropping of yield is suppressed as caused by disconnection of a lead electrode formed on an annular electrode. <P>SOLUTION: The electrode structure comprises a contact layer 5A with p-type upper surface; an n-type semiconductor layer 14 with n-type upper surface; an insulating layer 21 in which a slope 25a is formed that covers at least a part of the edge of the upper surface of the contact layer 5A as well as at least a part of the edge of the upper surface of the n-type semiconductor layer 14, and sinks as advances to the upper surface of the contact layer 5A; an electrode 11 of which one end is formed on the contact layer 5A while the other end is formed on the slope 25a; an electrode 16 which is formed on the n-type semiconductor layer 14, with both ends formed on the insulating layer 21; a pad 31a for applying a voltage to the contact layer 5A; and a wiring 31 which is formed on the electrodes 11 and 16 as well as the insulating layer 21 to connect the electrode 11 to the pad 31a by way of the electrode 16. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
