| 摘要 |
In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R<SUP>1 </SUP>is H, methyl or trifluoromethyl, R<SUP>2 </SUP>and R<SUP>3 </SUP>are alkyl, R<SUP>4 </SUP>is a monovalent hydrocarbon group, X<SUP>1 </SUP>is O, S or CH<SUB>2</SUB>CH<SUB>2</SUB>, X<SUP>2 </SUP>is O, S, CH<SUB>2 </SUB>or CH<SUB>2</SUB>CH<SUB>2</SUB>, n is 1 or 2, a and b each are from 0.01 to less than 1, c, d1 and d2 each are from 0 to less than 1, and a+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.
|
