Device for the electrochemical etching of silicon wafer, comprises chamber filled with electrolyte, current source and first- and second electrode connected to anode and cathode of the current source respectively

摘要

The device for the electrochemical etching of a silicon wafer (4), comprises a chamber (1), a current source and a first (5)- and a second electrode (7) connected to an anode and a cathode of the current source respectively. The chamber is filled with an electrolyte (2) and has an etching cell (10). The first electrode consists of a conductive polymer in the comparison with the silicon wafer. The modulus of elasticity of the first electrode is 100-10 MPa. A further connection electrode contacting directly is intended with the first electrode. The device for the electrochemical etching of a silicon wafer (4), comprises a chamber (1), a current source and a first (5)- and a second electrode (7) connected to an anode and a cathode of the current source respectively. The chamber is filled with an electrolyte (2) and has an etching cell (10). The first electrode consists of a conductive polymer in the comparison with the silicon wafer. The modulus of elasticity of the first electrode is 100-10 MPa. A further connection electrode contacting directly is intended with the first electrode. For the avoidance of electrical currents leakage, an isolating seal (3) is intended between the housing and the silicon wafer. The first electrode is arranged within the housing and is brought in for the avoidance of electrical current leakage into an isolating range with seal. An independent claim is included for a procedure for the electrochemical etching of a silicon wafer.