发明名称 |
MEMORY CIRCUIT AND METHOD FOR SENSING A MEMORY ELEMENT |
摘要 |
The memory circuit comprises at least one memory element (T1), a sense amplifier (SA) for sensing a state of the memory element (T1), a switching device (T2) for selectively coupling the sense amplifier (SA) to the memory element (T1), The sense amplifier (SA) comprises a first module (M1) and a second module (M2). The first module (M1) provides a first current limited to a maximum value (Iref+Ibias). The second module (M2) provides a second current which decreases from a value higher than the maximum value at the start of a sensing operation until a value lower than the maximum value at the end of the sensing operation. The memory circuit has a third module (CS2) for sinking a third current (Ibias) at a side of the switching device (T2) coupled to the memory element (T1). |
申请公布号 |
WO2007122564(A3) |
申请公布日期 |
2008.01.10 |
申请号 |
WO2007IB51414 |
申请日期 |
2007.04.19 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V.;STORMS, MAURITS, M., N. |
发明人 |
STORMS, MAURITS, M., N. |
分类号 |
G11C11/4091;G11C7/06 |
主分类号 |
G11C11/4091 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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