| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element capable of increasing light extraction efficiency by using a tranlucent substrate, and to provide a method of manufacturing the semiconductor light-emitting element and a compound semiconductor light-emitting diode. <P>SOLUTION: A body 1705 comprises: an n-Al<SB>0.6</SB>Ga<SB>0.4</SB>As current diffusion layer 1702, an n-Al<SB>0.5</SB>In<SB>0.5</SB>P cladding layer 1703, an AlGaInP active layer 1704, a p-Al<SB>0.5</SB>In<SB>0.5</SB>P cladding layer 1705, a p-GaInP intermediate layer 1706, and p-GaP contact layer 1707. An n-GaP translucent substrate 1701 and a p-GaP translucent substrate 1708 are installed below and above the body 1750, respectively. The n-GaP translucent substrate 1701 and the p-GaP translucent substrate 1708 are translucent for the emission light of an AlGaInP luminous layer 1705 each. <P>COPYRIGHT: (C)2008,JPO&INPIT |
