发明名称 THIN-FILM SEMICONDUCTOR DEVICE, LATERAL BIPOLAR THIN-FILM TRANSISTOR, HYBRID THIN-FILM TRANSISTOR, MOS THIN-FILM TRANSISTOR, AND METHOD OF FABRICATING THIN-FILM TRANSISTOR
摘要 In a lateral bipolar transistor including an emitter, a base and a collector which are formed in a semiconductor thin film formed on an insulating substrate, the semiconductor thin film is a semiconductor thin film which is crystallized in a predetermined direction. In addition, in a MOS-bipolar hybrid transistor formed in a semiconductor thin film formed on an insulating substrate, the semiconductor thin film is a semiconductor thin film which is crystallized in a predetermined direction.
申请公布号 US2008006826(A1) 申请公布日期 2008.01.10
申请号 US20070760926 申请日期 2007.06.11
申请人 KAWACHI GENSHIRO 发明人 KAWACHI GENSHIRO
分类号 H01L29/00;H01L29/76 主分类号 H01L29/00
代理机构 代理人
主权项
地址