| 摘要 |
<P>PROBLEM TO BE SOLVED: To stably form a defect-free, high-quality thin film by inhibiting the occurrence of abnormal electrical discharge such as arcing during high-speed film formation by gas-flow sputtering. <P>SOLUTION: In a film-forming method using a gas-flow sputtering apparatus, pulse sputtering is performed using a pulsed power supply 20 as a power supply in the gas-flow sputtering apparatus. By using the pulsed power supply 20 instead of a DC power supply in the gas-flow sputtering apparatus, dual cathode pulse sputtering can be performed, in which electric power is alternately applied to two targets preferably facing each other so that one of them discharges as a cathode and the other serves as an anode. This enables stable discharge in a wide area and film formation at a higher speed. <P>COPYRIGHT: (C)2008,JPO&INPIT |
