METHOD FOR PRODUCING III-V/II-VI SEMICONDUCTOR INTERFACE

摘要

PROBLEM TO BE SOLVED: To produce III-V/II-VI semiconductor interface reproducibly. SOLUTION: Molecular beam epitaxy (MBE) equipment (50 or 150) including sources of group III elements (68 or 170), group II elements (72 or 92'), group V elements (70 or 172), and group VI elements is prepared. A substrate (12) having a III-V semiconductor surface is positioned in the MBE equipment (50 or 150). Next, the substrate (12) is heated up to a temperature suitable for growing III-V semiconductor and crystalline III-V semiconductor buffer layer (14) is grown. Then the substrate temperature is adjusted by means of alternative molecular epitaxy to a temperature suitable for growing II-VI semiconductor and crystalline II-VI semiconductor buffer layer (16) is grown on the III-V buffer layer. The sources of group II and group VI are operated to expose the III-V buffer layer to group II element flux before exposing to group VI element flux. COPYRIGHT: (C)2008,JPO&INPIT