APPARATUS FOR CLEANING A WAFER SUBSTRATE

摘要

A method and apparatus for dry chemical processing a wafer at atmospheric pressure is disclosed. The edge area of a substrate is placed in isolation from the remainder of the substrate. According to the present teachings, a method for centering a wafer on a rotatable chuck is provided. The method includes the steps of positioning a wafer adjacent to a micrometer. The wafer is then rotated and a plurality of wafer edge locations and rotational increments are measured. A center offset value for the value of the wafer center with respect to a chuck is calculated. The wafer is then moved with respect to a center position of the chuck.