发明名称 |
LED HAVING VERTICAL STRUCTURE AND METHOD FOR MAKING THE SAME |
摘要 |
A vertical type light emitting device and a manufacturing method thereof are provided to improve light extraction efficiency by variously controlling a conductive semiconductor template shape of the light emitting device. A mask layer(30) is formed on a substrate(10). A conductive semiconductor layer(40) is formed on an upper side of the mask layer. Plural semiconductor layers(51,52,53) are formed on the conductive semiconductor layer. A first electrode(70) is formed on an LED(Light Emitting Diode) structure semiconductor layer(50). A supporting layer(80) is formed on the first electrode. The substrate is removed. A second electrode(60) is formed on a conductive semiconductor layer surface exposed by removing the substrate. The mask layer is formed on a buffer layer(20) which is deposited on the substrate. The buffer layer is an InAlGaN layer.
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申请公布号 |
KR20080004809(A) |
申请公布日期 |
2008.01.10 |
申请号 |
KR20060063586 |
申请日期 |
2006.07.06 |
申请人 |
LG ELECTRONICS INC.;LG INNOTEK CO., LTD. |
发明人 |
NA, JONG HO;CHOI, JAE WAN |
分类号 |
H01L33/12;H01L33/20 |
主分类号 |
H01L33/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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