| 摘要 |
<p>A method for forming a fine pattern of a semiconductor device is provided to overcome the limiting resolution of an exposure equipment by a simple process of depositing a nitride film and a glass carbon film on a photosensitive film pattern sequentially and etching the deposited films. A method for forming a fine pattern of a semiconductor device includes the steps of: forming a photosensitive film pattern on an etched layer(112); forming a nitride film(118) on the photosensitive film pattern(116); forming a glass carbon film(120) on the nitride film; planarizing the resultant until the photosensitive film pattern is exposed; and patterning the etched layer by performing a dry etching process for the photosensitive film pattern and the glass carbon film with an etching mask. The nitride film is deposited at a temperature of 100 to 250 °C so that a thickness of the nitride film from a surface of the photosensitive film pattern is in the range of 5 to 50nm. The glass carbon film is deposited at 100 to 250 °C so that a thickness of the glass carbon film is in the range of 5 to 1000nm.</p> |
