| 摘要 |
<P>PROBLEM TO BE SOLVED: To simplify the manufacture of a compound semiconductor light-emitting element, made up of an n-type group III compound semiconductor layer and a p-type BP semiconductor layer, each provided with an ohmic electrode. <P>SOLUTION: p-type and n-type ohmic electrodes provided in a p-type BP series semiconductor layer and an n-type group III nitride semiconductor layer, respectively, are made of identical material. An alloy of aluminum and a lanthanum-group element, titanium, a titanium-based alloy, etc. can be used for the material to make the electrode. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
