| 摘要 |
<p>854,753. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES Ltd. April 1, 1957 [April 4, 1956], No. 10563/57. Class 37 In a semi-conductor device comprising a plurality of ohmic or rectifying contacts formed by a process of heating material containing donor or acceptor impurities in contact with a semiconductor body to dissolve the surface material, and then cooling to recrystallize impurity doped semi-conductor material on the body, only some of the contacts are connected to supply conductors. In one embodiment particles of aluminium are dropped on the pickled upper surface of an N type silicon wafer the lower face of which is nickel plated. The assembly is heated for 5 minutes at 780 ‹C. in an atmosphere of nitrogen or hydrogen and afterwards cooled. The upper surface is again pickled and a further nickel coating plated on the lower face before the wafer is broken up into small discs each carrying about 15 PN junction rectifying contacts to a selected one of which a conductor is attached. To form a transistor conductors are attached to two contacts spaced about 20 microns apart.</p> |
