CMOS integrated circuit with high voltage and high frequency transistors

摘要

A CMOS circuit comprises at least one high voltage transistor 4 and at least one high frequency capable transistor 6 integrated on the same semiconductor substrate 8. The high voltage transistor 4 has a gate and drain operating voltage greater than 5 to 8V. The high frequency transistor 6 has a maximum switching frequency of between 100 MHz and 1000 GHz. The CMOS circuit may further comprise low voltage transistors 2. Thus simple integration of high voltage circuits and RF (radio frequency) CMOS circuits on the same integrated circuit is achieved.