| 摘要 |
A nitride semiconductor light emitting element wherein emission output deterioration due to film quality deterioration of a nitride semiconductor layer due to lattice mismatch between a substrate and the nitride semiconductor layer is prevented and light traveling to the substrate can be also efficiently used, while permitting the light emitting element to be a vertical type, by using the SiC substrate. A light reflecting layer (2) wherein low refractive index layers (21) and high refractive index layers (22) having different refractive indexes are alternately stacked is directly arranged on the SiC substrate (1). On the light reflecting layer (2), a semiconductor multilayer section (5) wherein a nitride semiconductor layer is stacked to have at least a light emitting layer forming section (3) is arranged on the light reflecting layer (2). On an upper plane side of the semiconductor multilayer section (5), an upper electrode (7) is arranged, and on a rear plane of the SiC substrate (1), a lower electrode (8) is arranged.
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