发明名称 |
Pulsed processing semiconductor heating methods using combinations of heating sources |
摘要 |
Pulsed processing methods and systems for heating objects such as semiconductor substrates feature process control for multi-pulse processing of a single substrate, or single or multi-pulse processing of different substrates having different physical properties. Heat is applied a controllable way to the object during a background heating mode, thereby selectively heating the object to at least generally produce a temperature rise throughout the object during background heating. A first surface of the object is heated in a pulsed heating mode by subjecting it to at least a first pulse of energy. Background heating is controlled in timed relation to the first pulse. A first temperature response of the object to the first energy pulse may be sensed and used to establish at least a second set of pulse parameters for at least a second energy pulse to at least partially produce a target condition.
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申请公布号 |
US7317870(B2) |
申请公布日期 |
2008.01.08 |
申请号 |
US20050137653 |
申请日期 |
2005.05.25 |
申请人 |
MATTSON TECHNOLOGY, INC. |
发明人 |
TIMANS PAUL J.;ACHARYA NARASIMHA |
分类号 |
A21B2/00;H05B3/00;C30B31/12;F27D11/02;H01L21/00;H01L21/26;H01L21/268;H05B1/02;H05B3/68 |
主分类号 |
A21B2/00 |
代理机构 |
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主权项 |
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地址 |
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