| 摘要 |
A crystallization method and a crystallization mask manufacturing method are provided to reduce a morphology change by forming a plurality of patterns with different grain sizes in one mask pattern and preventing a laser beam from transmitting between a pattern and a pattern(buffer area). A first region includes a plurality of first slit patterns(103) having a first grain size. A second region includes a plurality of second slit patterns(105) having a second grain size. A third region is formed between the first slit pattern and the second slit pattern, and includes an un-crystallization region. The grain size in the first region is greater than that in the second region, and the first region is used for a switching TFT(Thin Film Transistor), and the second region is used for a driving TFT. |
