| 摘要 |
A method for fabricating a semiconductor device is provided to prevent a gate oxide layer from being deteriorated by plasma by using an HDP(high density plasma) oxide layer as an interlayer dielectric that insulates bitlines from each other and a biltine from a storage node. A process for forming an isolation layer, a process for forming a gate, a process for forming a bitline and a process for forming an interlayer dielectric are sequentially performed wherein an HDP oxide layer is formed as an interlayer dielectric for insulating bitlines from each other and a bitline from a storage node in the interlayer dielectric formation process. An insulation layer is formed on the lower surface(21) of the substrate during the isolation layer formation process so that a gate oxide layer is prevented from being deteriorated by plasma in forming the HDP oxide layer. The insulation layer on the lower surface of the substrate can be made of a stack layer composed of a pad oxide layer(22), a pad nitride layer(23) and an oxide layer(24) for etch stop wherein the pad oxide layer and the pad nitride layer are formed to form a trench and the oxide layer for etch stop is formed to prevent the pad nitride layer from being removed.
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