| 摘要 |
A method for forming a cylindrical MIM capacitor is provided to remove the horn formed at the upper part of a storage node by forming a TiONx layer on the surface of a storage node by an O2 plasma treatment and by performing an etch-back process on the resultant storage node by Cl2 source gas. A mold insulation layer is formed on a semiconductor substrate(10) in which an interlayer dielectric including several storage node contacts(20) is formed. The mold insulation layer is etched to form a hole that exposes each storage node contact and defines a region for forming a storage node(70). A metal layer for a storage node is formed on the hole and the substrate. An etch-back process is performed on the metal layer to form a storage node while adjacent storage nodes are separated. An O2 plasma process is performed on the storage node to form a metal oxynitride layer on the surface of the storage node. A dip-out process is performed on the resultant structure to remove the mold insulation layer. An etch-back process is performed on the resultant structure to remove a part of the storage node in which the metal oxynitride layer is not formed. The metal layer for the storage node can be a TiN layer. The metal oxynitride layer can be a TiONx layer(70a).
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