| 摘要 |
A PECVD(plasma enhanced chemical vapor deposition) apparatus is provided to uniformly distribute radicals by forming a magnetic field on a susceptor. A susceptor(120) is installed in a process chamber(260) to support a substrate(100). A magnetic field generating part(280) is installed on the susceptor to generate a magnetic field. Reaction gas for depositing a thin film on the substrate is injected into the process chamber by a gas injection hole(160). The magnetic field generating part is composed of a plurality of magnets. In forming the magnetic field generating part, a plurality of conductive wires are disposed in the susceptor and the current is supplied to the plurality of conductive wires.
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