| 摘要 |
A method for manufacturing a storage node hole in a semiconductor device is provided to ensure a required critical dimension by increasing the minimum bar critical dimension of an anti reflection coating and a SiON layer. A storage node oxide layer(15) is formed on a semiconductor substrate(11) having a storage node contact plug. An amorphous carbon layer, a SiON layer, and an anti reflection coating are sequentially formed on the storage node oxide layer. A contact mask is formed on the anti reflection coating. The anti reflection coating and the SiON layer are etched by using etch gas having carbon and the contact mask as an etch barrier. By etching the amorphous carbon layer using the contact mask, the anti reflection coating, and the SiON layer as an etch barrier, an amorphous carbon hard mask(16A) is formed. By etching the storage node oxide layer using the amorphous carbon hard mask, a storage node hole(20) for exposing the storage node contact plug is formed.
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