| 摘要 |
A display device forming method is provided to minimize the expansion of a flexible substrate by forming silicon nitride used as a gate insulating layer except H2 and He, carrier gas, thereby having no necessity to design compensationally a semiconductor layer in forming the semiconductor layer. A display device forming method comprises the following steps of: supplying a substrate(10); forming a gate line(20) on the substrate; forming a gate insulating layer(30) for minimizing the expansion of the substrate by reacting a silicon compound to a silicon nitride layer insulating the gate line in a nitrogen atmosphere except H2(Hydrogen) and He(Helium); and forming a channel layer and a data line(50) on the gate insulating layer. |
