| 摘要 |
<p>A method for fabricating a SONOS(substrate-oxide-nitride-oxide-silicon) flash memory device is provided to increase a coupling ratio and a program speed by forming a blocking oxide layer composed of a metal oxide layer with a high dielectric constant. A tunnel oxide layer(12) and a trap nitride layer(13) are sequentially formed on a semiconductor substrate(10). A blocking oxide layer(14) composed of a metal oxide layer is formed on the trap nitride layer. A heat treatment is performed to eliminate a defect of the blocking oxide layer. A gate conductive layer(15) is formed on the blocking oxide layer. The tunnel oxide layer is formed by using an oxygen radical or OH radical as a source by using plasma or heat as an energy source at a temperature of 300 to 950 degrees centigrade.</p> |
