| 摘要 |
A storage capacitor is provided to prevent a storage electrode from being tilted to one side to be electrically connected to an adjacent storage electrode by reducing a contact area between a storage electrode and a contact plug in removing a sacrificial oxide layer and a mold oxide layer. An interlayer dielectric is formed on a semiconductor substrate(100) or a conductive layer. The interlayer dielectric on the conductive layer is removed to form a contact hole for selectively exposing the conductive layer, and a contact plug(114) is formed in the contact hole. A mold oxide layer is formed by a predetermined thickness on the front surface of the substrate including the contact plug. The mold oxide layer and the interlayer dielectric on the upper surface of the contact plug and in the periphery of the contact plug are removed to form a trench. The contact plug protrudes from the bottom surface of the trench. A storage electrode(119) of a predetermined thickness is formed on the front surface of the substrate including the trench. A sacrificial oxide layer is formed on the resultant structure, and the semiconductor substrate is planarized to expose the mold oxide layer so that a node of the storage electrode is separated. The sacrificial oxide layer and the mold oxide layer are removed. A dielectric layer(120) and a plate electrode(121) are formed by a predetermined thickness on the storage electrode. The interlayer dielectric includes an etch stop layer for defining the bottom of the trench.
|
