A LIGHT EMITTING DEVICE OF A NITRIDE CONPOUND SENICONDUCTOR

摘要

A nitride semiconductor light emitting device is provided to reduce the stress caused by a difference of lattice constants and thermal expansion coefficients between a substrate and a semiconductor layer by including a buffer layer with less crystal defect in comparison with a conventional technique. A buffer layer(23) is formed on a substrate(21). A gallium nitride-based compound semiconductor layer(27) is formed on the buffer layer. In the buffer layer, an AlxGa1-xN(0<x<=1) material layer or an undoped AlyGa1-yN(0<=y<=1) material layer(25) is alternately stacked at least once. The buffer layer includes an AlxGa1-xN(0<x<=1) material layer formed by a thickness of 5-100 nanometers at a temperature of 300-900 degrees centigrade. The buffer layer includes an undoped AlxGa1-xN(0<=y<=1) material layer formed by a thickness of 2-20 micrometers at a temperature of 600-1200 degrees centigrade.