| 摘要 |
A method for manufacturing a semiconductor device is provided to obtain easily a channel of triple structure in a fin-step cell transistor by implanting uniformly dopants into side and upper portions of fin-step. A first recess mask is formed on a substrate defined with an active region to expose a storage node contact and a gate electrode forming regions. A step is formed by etching the exposed region using the first recess mask. A fin-step(21) is then formed by etching a bit line contact forming region using a second recess mask. A first channel implanting is performed into the sides of the fin-step by rotating 90 degree using a first tilt angle. A second channel implanting is performed into the upper of the fin-step by rotating 180 degree using a second tilt angle with a relatively small compared with the first tilt angle.
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